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| Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0870 Features * Usable Gain to 6.0 GHz * High Gain: 32.5 dB Typical at 0.1 GHz 23.5 dB Typical at 1.0 GHz * Low Noise Figure: 3.0 dB Typical at 1.0 GHz * Hermetic Gold-ceramic Microstrip Package purpose 50 gain block above 0.5 GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in industrial and military applications. 70 mil Package Description The MSA-0870 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This MMIC is designed for use as a general The MSA-series is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. Typical Biasing Configuration R bias VCC > 10 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 7.8 V 2 5965-9544E 6-418 MSA-0870 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 80 mA 750 mW +13 dBm 200C -65C to 200C Thermal Resistance[2,4]: jc = 150C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 6.7 mW/C for TC > 88C. 4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information. Electrical Specifications[1], TA = 25C Symbol GP Parameters and Test Conditions: Id = 36 mA, ZO = 50 Power Gain (|S21| 2) f = 0.1 GHz f = 1.0 GHz f = 4.0 GHz f = 1.0 to 3.0 GHz f = 1.0 to 3.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz Units dB Min. 22.0 Typ. 32.5 23.5 11.0 2.0:1 1.9:1 Max. 25.0 12.0 VSWR NF P1 dB IP3 tD Vd dV/dT Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient dB dBm dBm psec V mV/C 7.0 3.0 12.5 27.0 125 7.8 -17.0 8.4 Note: 1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current is on the following page. 6-419 MSA-0870 Typical Scattering Parameters[1] (ZO = 50 , TA = 25C, Id = 36 mA) Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 .65 .60 .48 .40 .35 .32 .29 .30 .31 .32 .34 .34 .33 .39 -19 -35 -60 -76 -88 -102 -118 -133 -139 -149 -159 -168 161 128 32.5 31.5 29.1 26.8 24.9 23.4 20.1 17.6 15.6 13.8 12.2 10.8 8.4 6.2 42.04 37.54 28.49 21.90 17.48 14.85 10.14 7.55 6.01 4.87 4.09 3.48 2.63 2.04 161 145 122 108 97 87 70 56 49 39 28 17 -3 -22 -36.3 -33.7 -30.5 -28.0 -26.2 -24.9 -23.0 -21.9 -20.0 -19.5 -18.4 -17.7 -16.6 -16.2 .015 .021 .030 .040 .049 .057 .071 .081 .100 .106 .121 .131 .147 .155 40 47 51 50 50 51 47 45 46 41 35 31 21 10 .64 .58 .47 .38 .33 .28 .22 .16 .12 .07 .07 .12 .19 .21 -22 -43 -74 -97 -113 -128 -151 -167 -172 -170 -143 -112 -103 -115 0.78 0.66 0.64 0.72 0.78 0.83 0.91 0.98 1.02 1.11 1.12 1.16 1.26 1.36 Note: 1. A model for this device is available in the DEVICE MODELS section. Typical Performance, TA = 25C (unless otherwise noted) 35 30 Gain Flat to DC 25 30 40 TC = +125C TC = +25C TC = -55C 35 0.1 GHz 30 0.5 GHz 25 G p (dB) G p (dB) Id (mA) 20 15 10 1.0 GHz 20 2.0 GHz 15 20 10 5 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) 0 0 2 4 6 Vd (V) 8 10 10 5 10 4.0 GHz 20 30 I d (mA) 40 Figure 1. Typical Power Gain vs. Frequency, Id = 36 mA. Figure 2. Device Current vs. Voltage. Figure 3. Power Gain vs. Current. 24 16 I d = 40 mA 14 GP 13 12 P1 dB 11 10 12 10 8 I d = 36 mA 4.5 I d = 20 mA I d = 36 mA I d = 40 mA Gp (dB) 23 22 21 4.0 P1 dB (dBm) P1 dB (dBm) NF (dB) I d = 20 mA 0.2 0.3 0.5 1.0 2.0 4.0 3.5 3.0 NF (dB) 4 3 2 -55 -25 +25 +85 NF 6 +125 4 0.1 2.5 0.1 0.2 0.3 0.5 1.0 2.0 FREQUENCY (GHz) FREQUENCY (GHz) TEMPERATURE (C) Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 1.0 GHz, Id=36mA. Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. Figure 6. Noise Figure vs. Frequency. 6-420 70 mil Package Dimensions .040 1.02 4 GROUND .020 .508 RF INPUT 1 RF OUTPUT AND BIAS 3 2 GROUND .004 .002 .10 .05 .070 1.70 Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13 .495 .030 12.57 .76 .035 .89 6-421 |
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